公开(公告)号：US20240250104A1

公开(公告)日：2024-07-25

申请号：US18416388

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyunha PARK ,  Jeongsoon KANG ,  Jongeun PARK ,  Gwideok Ryan LEE ,  Dongseok CHO

IPC: H01L27/146 ,  H01L23/00 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H04N25/79

Abstract: Provided is an image sensor including a first structure and a second structure stacked in a vertical direction, wherein the first structure includes a first pixel region, a photoelectric conversion unit in the first pixel region, a floating diffusion region in the first pixel region, a first interlayer insulating layer on the floating diffusion region, and a first pixel pad electrically connected to the floating diffusion region, and the second structure includes a second pixel region, a source-follower transistor in the second pixel region, a second interlayer insulating layer on the source-follower transistor, and a second pixel pad electrically connected to a gate of the source-follower transistor, and the image sensor includes a coupling prevention line arranged around the first and second pixel pads and electrically connected to the source region of the source-follower transistor.

公开(公告)号：US20230197755A1

公开(公告)日：2023-06-22

申请号：US17965268

申请日：2022-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong UM ,  Jeongsoon KANG ,  Jeongjin LEE

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L27/14636 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An image sensor may include a lower device on a lower substrate, an intermediate device on an intermediate substrate on the lower substrate, and an upper device on an upper substrate on the intermediate substrate. The lower device may include a logic transistor. The intermediate device may include at least one transistor. The upper device may include a photodiode and a floating diffusion region. The lower substrate, the intermediate substrate and the upper substrate may be stacked. The intermediate substrate may include a stack of a first semiconductor layer, a silicon oxide layer, and a second semiconductor layer pattern. An insulation pattern fills an opening at least partially defined by one or more inner surfaces of the first semiconductor layer. A buried insulation pattern fills a trench extending through the second semiconductor layer pattern.

公开(公告)号：US20210111202A1

公开(公告)日：2021-04-15

申请号：US16799287

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoun-Jee HA ,  Changhwa KIM ,  Jeongsoon KANG

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

公开(公告)号：US20250126903A1

公开(公告)日：2025-04-17

申请号：US18990000

申请日：2024-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Mintae RYU ,  Minsu LEE ,  Wonsok LEE

IPC: H10F39/18 ,  H10F39/00 ,  H10F39/15

Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

公开(公告)号：US20240387597A1

公开(公告)日：2024-11-21

申请号：US18390713

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan LEE ,  Jeongsoon KANG ,  Gyunha PARK ,  Jongeun PARK ,  Dongseok CHO

IPC: H01L27/146 ,  H04N25/63

Abstract: An image sensor includes a first structure and a second structure, each having at least one pixel and sequentially stacked in a vertical direction. Each of the pixels may include a photodiode portion, provided in the first structure, and a pixel circuit portion connected to the photodiode portion provided in the first structure.

公开(公告)号：US20230040060A1

公开(公告)日：2023-02-09

申请号：US17730739

申请日：2022-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Minkwan KIM ,  Minho JANG

IPC: H01L27/146

Abstract: Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

公开(公告)号：US20220302198A1

公开(公告)日：2022-09-22

申请号：US17528237

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Mintae RYU ,  Minsu LEE ,  Wonsok LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

公开(公告)号：US20220149092A1

公开(公告)日：2022-05-12

申请号：US17376333

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Buil JUNG ,  Hyunmog PARK ,  Wonsok LEE

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a pixel area in which a plurality of active areas is defined. A first transistor includes a first gate electrode including a buried gate portion. The buried gate portion is buried in the substrate in a first active area selected from the plurality of active areas. A second transistor includes a second gate electrode overlapping the buried gate portion on the first active area in a vertical direction.