公开(公告)号：US20220130856A1

公开(公告)日：2022-04-28

申请号：US17335763

申请日：2021-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNCHEOL KIM ,  JAEHO HONG ,  YONGSEOK KIM ,  ILGWEON KIM ,  HYEOUNGWON SEO ,  SUNGWON YOO ,  KYUNGHWAN LEE

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L25/065 ,  G11C7/18 ,  G11C8/14

Abstract: A semiconductor memory device includes first conductive lines stacked in a first direction perpendicular to a top surface of a substrate, second conductive lines extending in the first direction and intersecting the first conductive lines, and memory cells provided at intersection points between the first conductive lines and the second conductive lines, respectively. Each of the memory cells includes a semiconductor pattern parallel to the top surface of the substrate, the semiconductor pattern including a source region having a first conductivity type, a drain region having a second conductivity type, and a channel region between the source region and the drain region, first and second gate electrodes surrounding the channel region of the semiconductor pattern, and a charge storage pattern between the semiconductor pattern and the first and second gate electrodes.

公开(公告)号：US20200152256A1

公开(公告)日：2020-05-14

申请号：US16432124

申请日：2019-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYEOUNGWON SEO

IPC: G11C11/408 ,  G11C11/4076 ,  G11C5/14 ,  G11C11/4074

Abstract: An operation method of a memory device includes sequentially receiving an active command and a precharge command from an external device, during a first time interval, applying a first activation voltage to a selected wordline in response to the active command, applying a second activation voltage to the selected wordline after the first time interval elapses from a first time point when the first active command is received, and applying a first deactivation voltage to the selected wordline in response to the precharge command. The second activation voltage is lower than the first activation voltage and is higher than the first deactivation voltage.