公开(公告)号：US20210202264A1

公开(公告)日：2021-07-01

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGCHAN KIM ,  YOUNGTAK KIM ,  JUNGAH KIM ,  HOON HAN ,  GEUNJOO BAEK ,  CHISUNG IHN ,  SANGMOON YUN

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/306

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

公开(公告)号：US20190198315A1

公开(公告)日：2019-06-27

申请号：US16265709

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung KIM ,  Hyo-Sun LEE ,  Soojin KIM ,  Keonyoung KIM ,  JINHYE BAE ,  HOON HAN ,  Tae Soo KWON ,  Jung Hun LIM

IPC: H01L21/02 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  H01L21/683 ,  H01L23/00 ,  C11D11/00

CPC classification number: H01L21/02068 ,  C11D7/08 ,  C11D7/261 ,  C11D7/264 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2224/11 ,  H01L2224/03

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

公开(公告)号：US20240337948A1

公开(公告)日：2024-10-10

申请号：US18744751

申请日：2024-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYOJIN YUN ,  SEUNGWON KIM ,  TAEYOUNG KIM ,  WOOJUNG PARK ,  JINHYE BAE ,  HYUNSEOP SHIN ,  MINTAE LEE ,  HOON HAN ,  MOONYOUNG KIM ,  MOONCHANG KIM ,  CHEOLMO YANG ,  YUNSEOK CHOI

IPC: G03F7/42 ,  B08B3/04 ,  C11D3/04 ,  H01L21/02

CPC classification number: G03F7/425 ,  B08B3/04 ,  C11D3/044 ,  H01L21/0206

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

公开(公告)号：US20240243010A1

公开(公告)日：2024-07-18

申请号：US18403204

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHYUN LEE ,  EUN HYEA KO ,  SOYOUNG LEE ,  THANH CUONG NGUYEN ,  HOON HAN ,  BYUNGKEUN HWANG ,  HIROYUKI UCHIUZOU ,  KIYOSHI MURATA ,  TOMOHARU YOSHINO ,  YOUNJOUNG CHO

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/76831 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/76844

Abstract: An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:




where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

公开(公告)号：US20190136132A1

公开(公告)日：2019-05-09

申请号：US15973486

申请日：2018-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HOON HAN ,  SANG WON BAE ,  YOUNG TAEK HON ,  JAEWAN PARK ,  JINUK LEE ,  JUNGHUN LIM

IPC: C09K13/06 ,  H01L21/311

Abstract: A composition for etching may include phosphoric acid, an ammonium-based compound, at least one of hydrochloric acid or a polyphosphate-based compound, and a silicon-containing compound.