公开(公告)号：US11973109B2

公开(公告)日：2024-04-30

申请号：US17526840

申请日：2021-11-15

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Hun Kim ,  Jae Seok Yang ,  Hae Wang Lee

IPC分类号： H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762

CPC分类号： H01L29/0649 ,  H01L27/0924 ,  H01L29/42376 ,  H01L29/4916 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/7851 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/66545

摘要： A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

公开(公告)号：US11195910B2

公开(公告)日：2021-12-07

申请号：US16214659

申请日：2018-12-10

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Hun Kim ,  Jae Seok Yang ,  Hae Wang Lee

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/49

摘要： A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.