公开(公告)号：US20250054822A1

公开(公告)日：2025-02-13

申请号：US18654799

申请日：2024-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haram Ko ,  Young Ha Kim ,  Hyunjae Kang ,  Jinman Kim ,  Jonggu Lee

IPC: H01L23/14 ,  H01L23/00 ,  H01L23/528

Abstract: An integrated circuit device includes a first semiconductor substrate having a frontside surface and a backside surface, a front-end-of-line (FEOL) structure on the frontside surface of the first semiconductor substrate, the FEOL structure including a plurality of fin-type active regions, a back-end-of-line (BEOL) structure on the FEOL structure, a second BEOL structure on the backside surface of the first semiconductor substrate, and a second semiconductor substrate spaced apart from the first semiconductor substrate in the vertical direction with the FEOL structure and the first BEOL structure therebetween, wherein a Young's modulus of a first crystal orientation extending parallel to the frontside surface of the first semiconductor substrate is different from a Young's modulus of a second crystal orientation that overlaps the first crystal orientation in the vertical direction and extends parallel to the first crystal orientation in the second semiconductor substrate.