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    Near field communication device
    1.
    发明授权
    Near field communication device 有权

    公开(公告)号：US10212576B2

    公开(公告)日：2019-02-19

    申请号：US15602860

    申请日：2017-05-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyunjae Kang ,  Junho Kim ,  Yoonjoong Oh

    IPC: H04W8/00 ,  H04W4/80 ,  H04L12/26 ,  G06K7/10 ,  H04B5/00 ,  H04B5/02

    Abstract: Disclosed is a near field communication device which includes an antenna, a transceiver that transmits and receives a wireless signal through the antenna, a first detection pulse generation circuit that transmits a first detection pulse to the transceiver periodically in a first detection interval, a second detection pulse generation circuit that transmits a second detection pulse to the transceiver in a second detection interval, a start of frame (SOF) detection circuit that detects whether an SOF is received from the transceiver, in the second detection interval, and a control block that determines that a second near field communication device is present, when the SOF detection circuit detects the SOF.

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    2.
    发明公开
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240162096A1

    公开(公告)日：2024-05-16

    申请号：US18416585

    申请日：2024-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    CPC classification number: H01L22/12 ,  H01L21/31144

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Contactless card reading employing gain and attenuation control
    3.
    发明授权
    Contactless card reading employing gain and attenuation control 有权

    公开(公告)号：US11283483B2

    公开(公告)日：2022-03-22

    申请号：US17023923

    申请日：2020-09-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyunjae Kang

    IPC: H04B5/00 ,  H04B5/02 ,  H04B1/38

    Abstract: A contactless integrated circuit (IC) card reader configured to communicate with a contactless IC card includes an antenna circuit, a variable amplifier that amplifies a carrier signal at an amplification gain and outputs the amplified carrier signal to the antenna circuit as a transmit signal, a variable attenuator that attenuates a receive signal received through the antenna circuit at an attenuation ratio, and a controller that controls the amplification gain and the attenuation ratio based on the attenuated receive signal.

    INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20250054822A1

    公开(公告)日：2025-02-13

    申请号：US18654799

    申请日：2024-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Haram Ko ,  Young Ha Kim ,  Hyunjae Kang ,  Jinman Kim ,  Jonggu Lee

    IPC: H01L23/14 ,  H01L23/00 ,  H01L23/528

    Abstract: An integrated circuit device includes a first semiconductor substrate having a frontside surface and a backside surface, a front-end-of-line (FEOL) structure on the frontside surface of the first semiconductor substrate, the FEOL structure including a plurality of fin-type active regions, a back-end-of-line (BEOL) structure on the FEOL structure, a second BEOL structure on the backside surface of the first semiconductor substrate, and a second semiconductor substrate spaced apart from the first semiconductor substrate in the vertical direction with the FEOL structure and the first BEOL structure therebetween, wherein a Young's modulus of a first crystal orientation extending parallel to the frontside surface of the first semiconductor substrate is different from a Young's modulus of a second crystal orientation that overlaps the first crystal orientation in the vertical direction and extends parallel to the first crystal orientation in the second semiconductor substrate.

    Method of fabricating a semiconductor device
    5.
    发明授权
    Method of fabricating a semiconductor device 有权

    公开(公告)号：US12224214B2

    公开(公告)日：2025-02-11

    申请号：US18416585

    申请日：2024-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Method of fabricating a semiconductor device
    6.
    发明授权
    Method of fabricating a semiconductor device 有权

    公开(公告)号：US11955387B2

    公开(公告)日：2024-04-09

    申请号：US17386323

    申请日：2021-07-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seongkeun Cho ,  Eunhee Jeang ,  Jihun Lee ,  Gyumin Jeong ,  Hyunjae Kang ,  Taemin Earmme

    IPC: H01L21/66 ,  H01L21/311

    CPC classification number: H01L22/12 ,  H01L21/31144

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

    Card reader and method of operating the same
    10.
    发明授权
    Card reader and method of operating the same 有权

    公开(公告)号：US10204243B2

    公开(公告)日：2019-02-12

    申请号：US15370232

    申请日：2016-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunjae Kang ,  Junho Kim ,  Iljong Song ,  Sangchan Park

    IPC: H04Q5/22 ,  G06K7/10 ,  G06F13/42

    Abstract: A card reader performing a wireless communication with a card includes a first pulse generation unit generating a first detection pulse for detecting the card, a second pulse generation unit generating a plurality of second detection pulses for detecting the card, or a plurality of communication pulses for communicating with the card, and a card detection unit for sensing a card being detected by the first detection pulse or the second detection pulses. In the case that the card is not sensed through the first detection pulse, the second pulse generation unit generates the second detection pulses using the communication pulses and senses the card using the second detection pulses.

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