公开(公告)号：US20200225572A1

公开(公告)日：2020-07-16

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon KIM ,  Sangjin KIM ,  Heeyoung GO ,  Heebom KIM ,  Hoon KIM ,  Hong-Seock CHOI ,  Jinseok HEO

IPC: G03F1/54 ,  G03F1/60 ,  G03F1/52 ,  G03F1/22

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.