公开(公告)号：US20210302825A1

公开(公告)日：2021-09-30

申请号：US17028049

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mankyu KANG ,  Hoon KIM ,  Jongkeun OH ,  Minho KIM ,  Heebom KIM

IPC: G03F1/54 ,  G03F7/20 ,  H01L21/033 ,  H01L21/308

Abstract: A reticle for an apparatus for EUV exposure and a method of manufacturing a reticle, the reticle including a substrate including an edge region and a main region; a multi-layer structure on the main region and the edge region, a sidewall of the multi-layer structure overlying the edge region; a capping layer covering an upper surface and the sidewall of the multi-layer structure and at least a portion of the edge region of the substrate; and an absorber layer on the capping layer, the absorber layer covering an entire upper surface of the capping layer on the edge region of the substrate, wherein a stacked structure of the capping layer and the absorber layer is on an upper surface of the edge region of the substrate, and a sidewall of the stacked structure of the capping layer and the absorber layer is perpendicular to an upper surface of the substrate.

公开(公告)号：US20200225572A1

公开(公告)日：2020-07-16

申请号：US16578628

申请日：2019-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon KIM ,  Sangjin KIM ,  Heeyoung GO ,  Heebom KIM ,  Hoon KIM ,  Hong-Seock CHOI ,  Jinseok HEO

IPC: G03F1/54 ,  G03F1/60 ,  G03F1/52 ,  G03F1/22

Abstract: Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.