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    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230042905A1

    公开(公告)日：2023-02-09

    申请号：US17704465

    申请日：2022-03-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Kyeongbeom PARK ,  Suhyun BARK ,  Sangshin JANG ,  Jinhee JANG ,  Cheolin JANG ,  Tae Min CHOI

    IPC: H01L21/768 ,  H01L21/027 ,  H01L21/311

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target layer, a mask layer, a blocking layer, and a photoresist layer, which are sequentially stacked on a substrate; forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light; forming a mask layer, the forming the mask layer including etching the mask layer using the photoresist pattern as an etch mask; and forming a target pattern, the forming the target pattern including etching the etch-target layer using the mask pattern as an etch mask. The photoresist layer may include an organic metal oxide. The blocking layer may be a non-polar layer and may limit and/or prevent a metallic element in the photoresist layer from infiltrating into the mask layer.

    METHOD OF FORMING A PATTERN
    2.
    发明申请
    METHOD OF FORMING A PATTERN 有权

    公开(公告)号：US20230036420A1

    公开(公告)日：2023-02-02

    申请号：US17697019

    申请日：2022-03-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Jinhee JANG ,  Taemin CHOI

    IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/20

    Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material, The etching object layer is etched using the photoresist pattern as an etching mask.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明公开
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240282576A1

    公开(公告)日：2024-08-22

    申请号：US18535594

    申请日：2023-12-11

    Applicant: SAMSUNG ELECTRONICS CO.,LTD.

    Inventor： Hyungju RYU ,  Sangjin KIM ,  Yigwon KIM ,  Jongsu KIM

    IPC: H01L21/027 ,  G03F7/00 ,  H01L21/304

    CPC classification number: H01L21/0274 ,  G03F7/70625 ,  G03F7/70633 ,  H01L21/3043

    Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor substrate on a second semiconductor substrate; performing a first physical parameter measurement on a first surface of the first semiconductor substrate to obtain first displacement data; polishing the first surface of the first semiconductor substrate after the first displacement data is obtained; performing a second physical parameter measurement on the polished first surface of the first semiconductor substrate to obtain second displacement data; and forming circuit patterns on the polished first surface of the first semiconductor substrate based on the second displacement data.

    SEMICONDUCTOR DEVICE
    4.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240055425A1

    公开(公告)日：2024-02-15

    申请号：US18365452

    申请日：2023-08-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyungju RYU ,  Sangjin KIM ,  Yigwon KIM ,  Changmin PARK

    IPC: H01L27/088 ,  H01L29/775 ,  H01L29/423 ,  H01L29/06

    CPC classification number: H01L27/088 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/0673

    Abstract: A semiconductor device is provided, the semiconductor device including; a substrate; a first fin structure extending on the substrate in a first direction, and having a first fin portion having a first width and a second fin portion having a second width; a second fin structure extending on the substrate in the first direction, and having the second width; first gate lines disposed on the first fin portion and the second fin structure, and extending in a second direction; second gate lines disposed on the second fin portion and the second fin structure, and extending in the second direction; a third gate line disposed on the second fin structure, and extending in the second direction between the first and second gate lines; and a device isolation pattern connected to an end portion of the third gate, and extending between the first and second fin portions.

    EXTREME ULTRAVIOLET (EUV) PHOTOMASK
    5.
    发明公开
    EXTREME ULTRAVIOLET (EUV) PHOTOMASK 审中-公开

    公开(公告)号：US20230400758A1

    公开(公告)日：2023-12-14

    申请号：US18317328

    申请日：2023-05-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yigwon KIM ,  Sangjin KIM ,  Jihun LEE ,  Jinhee JANG ,  Jeonghyun KIM

    IPC: G03F1/22

    CPC classification number: G03F1/22

    Abstract: An extreme ultraviolet (EUV) photomask may include a mask structure including a main region, a scribe lane region surrounding the main region, buffer regions outside the scribe lane region and apart from each other and each having a same first width, and a black border region outside the buffer regions. The buffer regions may include a first buffer region, a second buffer region, and a third buffer region. The black border region may include a first corner region, a second corner region, and a third corner region. The first corner region may contact the first buffer region and the second buffer region. The second corner region may contact the first buffer region, the third buffer region, and a side of the scribe lane region. The third corner region may contact the second buffer region and the third buffer region.

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