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公开(公告)号：US20250085329A1
公开(公告)日：2025-03-13
申请号：US18958291
申请日：2024-11-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donghun Heo , Himchan Park , Cheolhwan Lim
Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
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公开(公告)号：US12181512B2
公开(公告)日：2024-12-31
申请号：US17984332
申请日：2022-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghun Heo , Himchan Park , Cheolhwan Lim
Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
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公开(公告)号：US20230296661A1
公开(公告)日：2023-09-21
申请号：US17984332
申请日：2022-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donghun Heo , Himchan Park , Cheolhwan Lim
CPC classification number: G01R31/2608 , G01R19/10 , H01L27/0647
Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.
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4.发明授权公开(公告)号：US10895798B2
公开(公告)日：2021-01-19
申请号：US16121392
申请日：2018-09-04
Inventor： Young Kim , Kanghee Won , Himchan Park , Jinwook Burm , Hoon Song , Hongseok Lee
Abstract: A beam deflector, a holographic display device including the beam deflector, and a method of driving the beam deflector are provided. The beam deflector includes first electrodes spaced apart from each other on a first substrate, second electrodes spaced apart from each other on a second substrate, a liquid crystal layer between the first substrate and the second substrate, and a controller configured to cause active prisms to be formed in the liquid crystal layer and to form a floating zone by turning off a voltage of at least one of the first electrode and the second electrode disposed between adjacent ones of the active prisms.
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