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公开(公告)号：US08790986B2
公开(公告)日：2014-07-29
申请号：US13705320
申请日：2012-12-05
发明人： Jae Hyoung Choi , Ki Yeon Park , Joon Kim , Cha Young Yoo , Youn Soo Kim , Ho Jun Kwon , Sang Yeol Kang
IPC分类号： H01L21/20
摘要： A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
摘要翻译： 一种制造半导体器件的方法，所述方法包括：制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。
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公开(公告)号：US20130149833A1
公开(公告)日：2013-06-13
申请号：US13705320
申请日：2012-12-05
发明人： Jae Hyoung Choi , Ki Yeon Park , Joon Kim , Cha Young Yoo , Youn Soo Kim , Ho Jun Kwon , Sang Yeol Kang
IPC分类号： H01L49/02
摘要： A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
摘要翻译： 一种制造半导体器件的方法，所述方法包括：制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。
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