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公开(公告)号：US08790986B2
公开(公告)日：2014-07-29
申请号：US13705320
申请日：2012-12-05
发明人： Jae Hyoung Choi , Ki Yeon Park , Joon Kim , Cha Young Yoo , Youn Soo Kim , Ho Jun Kwon , Sang Yeol Kang
IPC分类号： H01L21/20
摘要： A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
摘要翻译： 一种制造半导体器件的方法，所述方法包括：制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。
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公开(公告)号：US20130149833A1
公开(公告)日：2013-06-13
申请号：US13705320
申请日：2012-12-05
发明人： Jae Hyoung Choi , Ki Yeon Park , Joon Kim , Cha Young Yoo , Youn Soo Kim , Ho Jun Kwon , Sang Yeol Kang
IPC分类号： H01L49/02
摘要： A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.
摘要翻译： 一种制造半导体器件的方法，所述方法包括：制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。
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公开(公告)号：US09923047B2
公开(公告)日：2018-03-20
申请号：US14967956
申请日：2015-12-14
发明人： Se Hoon Oh , Seongyul Park , Chin Moo Cho , Yunjung Choi , Gyu-Hee Park , Youn-Joung Cho , Younsoo Kim , Jae Hyoung Choi
IPC分类号： H01L49/02 , H01L21/322
CPC分类号： H01L28/65 , H01L21/322 , H01L28/75
摘要： The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.
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