Method for fabricating semiconductor device

    公开(公告)号:US10403739B2

    公开(公告)日:2019-09-03

    申请号:US15865531

    申请日:2018-01-09

    Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.

    Methods of manufacturing semiconductor devices
    3.
    发明授权
    Methods of manufacturing semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号:US08790986B2

    公开(公告)日:2014-07-29

    申请号:US13705320

    申请日:2012-12-05

    CPC classification number: H01L28/60 H01L28/92

    Abstract: A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.

    Abstract translation: 一种制造半导体器件的方法,所述方法包括:制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。

    Methods of Manufacturing Semiconductor Devices
    4.
    发明申请
    Methods of Manufacturing Semiconductor Devices 有权
    制造半导体器件的方法

    公开(公告)号:US20130149833A1

    公开(公告)日:2013-06-13

    申请号:US13705320

    申请日:2012-12-05

    CPC classification number: H01L28/60 H01L28/92

    Abstract: A method of manufacturing a semiconductor device, the method including: preparing a semiconductor substrate including a mold layer and a support layer disposed on the mold layer; forming multiple holes that pass through the mold layer and the support layer; forming multiple bottom electrodes in the holes; exposing at least a portion of the bottom electrodes by removing at least a portion of the mold layer; removing a portion of the bottom electrodes from an exposed surface of the bottom electrodes; and sequentially forming a dielectric layer and a top electrode layer on the bottom electrodes.

    Abstract translation: 一种制造半导体器件的方法,所述方法包括:制备包括模层和设置在所述模层上的支撑层的半导体衬底; 形成穿过模层和支撑层的多个孔; 在孔中形成多个底部电极; 通过去除模具层的至少一部分来暴露至少一部分底部电极; 从底部电极的暴露表面去除一部分底部电极; 并且在底部电极上依次形成电介质层和顶部电极层。

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