公开(公告)号：US20230022639A1

公开(公告)日：2023-01-26

申请号：US17712238

申请日：2022-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Ji LEE ,  Jin-Kyu KANG ,  Rae Young LEE ,  Se Jun PARK ,  Jae Duk LEE ,  Gu Yeon HAN

IPC: G11C16/16 ,  H01L27/11556 ,  H01L27/11582 ,  G11C11/56 ,  G11C16/04

Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

公开(公告)号：US20240153563A1

公开(公告)日：2024-05-09

申请号：US18545144

申请日：2023-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Ji LEE ,  Jin-Kyu KANG ,  Rae Young LEE ,  Se Jun PARK ,  Jae Duk LEE ,  Gu Yeon HAN

IPC: G11C16/16 ,  G11C11/56 ,  G11C16/04 ,  H10B41/27 ,  H10B43/27

CPC classification number: G11C16/16 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  H10B41/27 ,  H10B43/27

Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.