公开(公告)号：US10353290B2

公开(公告)日：2019-07-16

申请号：US15183541

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Hong Park ,  Chawon Koh ,  Hyunwoo Kim ,  Sang-Yoon Woo ,  Hyejin Jeon

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11

Abstract: The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.