公开(公告)号：US20230288799A1

公开(公告)日：2023-09-14

申请号：US18061859

申请日：2022-12-05

Applicant: Samsung SDI Co., Ltd. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungrang Moon ,  Youngkwon Kim ,  Ryunmin Heo ,  Minyoung Lee ,  Minsoo Kim ,  Kyuwon Lee ,  Jung Min Choi ,  Cheol Hong Park ,  Moohyun Koh ,  Sang Won Bae ,  Jungah Kim

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  G03F7/325

Abstract: A method of forming patterns includes coating a metal-containing resist composition on a substrate, sequentially coating two types of compositions for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, and exposing and developing the metal-containing resist film to form a resist pattern; or coating a metal-containing resist composition on a substrate, coating a composition for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, exposing the metal-containing resist film, and developing with a developing solution composition to form a resist pattern, wherein details of the two types of compositions for removing edge beads and the developing solution composition are as described in the specification.

公开(公告)号：US10353290B2

公开(公告)日：2019-07-16

申请号：US15183541

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Hong Park ,  Chawon Koh ,  Hyunwoo Kim ,  Sang-Yoon Woo ,  Hyejin Jeon

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11

Abstract: The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.