公开(公告)号：US20190221563A1

公开(公告)日：2019-07-18

申请号：US16363050

申请日：2019-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck CHOI ,  Hae-wang LEE ,  Hyoun-jee HA ,  Chul-hong PARK

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/535 ,  H01L23/528 ,  H01L29/08 ,  H01L23/522 ,  H01L29/06 ,  H01L29/66 ,  H01L29/45

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

公开(公告)号：US20200335500A1

公开(公告)日：2020-10-22

申请号：US16920589

申请日：2020-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck CHOI ,  Hae-wang LEE ,  Hyoun-jee HA ,  Chul-hong PARK

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/08 ,  H01L23/535 ,  H01L23/522 ,  H01L29/45 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/768 ,  H01L21/762 ,  H01L29/417 ,  H01L27/092

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.

公开(公告)号：US20190013314A1

公开(公告)日：2019-01-10

申请号：US15849030

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hyuck CHOI ,  Hae-wang LEE ,  Hyoun-jee HA ,  Chul-hong PARK

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/528 ,  H01L29/08 ,  H01L23/535 ,  H01L23/522 ,  H01L29/45 ,  H01L21/8234 ,  H01L29/66

Abstract: An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.