公开(公告)号：US20230186988A1

公开(公告)日：2023-06-15

申请号：US17876077

申请日：2022-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojin CHUN ,  Minsung KIL ,  Hyoungtaek LIM

IPC: G11C14/00

CPC classification number: G11C14/0018

Abstract: A storage device includes a main system; a power loss protection integrated circuit (PLP IC) configured to provide output power to the main system based on external or internal power; and an auxiliary power supply configured to provide the internal power to the PLP IC. The main system may operate in a dump mode where data is backed up in response to at least one of a first condition or a second condition being satisfied. The PLP IC may provide the output power based on the internal power in response to a sudden power off (SPO) occurring. The first condition is satisfied when the SPO occurs and an SPO time is longer than a maximum filtering time. The second condition is satisfied when the SPO occurs and a voltage level of the internal power provided by the auxiliary power supply is lower than a voltage level of a threshold voltage.

公开(公告)号：US20220199122A1

公开(公告)日：2022-06-23

申请号：US17694946

申请日：2022-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woosung LEE ,  Chunghyun RYU ,  Hyoungtaek LIM

IPC: G11C5/00 ,  G11C5/14

Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.