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公开(公告)号：US10770154B2
公开(公告)日：2020-09-08
申请号：US16294058
申请日：2019-03-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong-Heon Yu , Joung Yeal Kim , Chul Ung Kim , Hyun Bo Kim , Joo Youn Lim
Abstract: Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes a power-up signal generator configured to generate a power-up signal in response to a memory voltage reaching a target voltage level, an initializer configured to generate an initialization signal in response to the power-up signal and a reset signal and to generate an initial refresh command in response to completion of an initialization operation, and a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, the memory cell array configured to perform an initial refresh operation on the plurality of memory cells in response to the initial refresh command.
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公开(公告)号：US20200082889A1
公开(公告)日：2020-03-12
申请号：US16294058
申请日：2019-03-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong-Heon Yu , Joung Yeal Kim , Chul Ung Kim , Hyun Bo Kim , Joo Youn Lim
Abstract: Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes a power-up signal generator configured to generate a power-up signal in response to a memory voltage reaching a target voltage level, an initializer configured to generate an initialization signal in response to the power-up signal and a reset signal and to generate an initial refresh command in response to completion of an initialization operation, and a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, the memory cell array configured to perform an initial refresh operation on the plurality of memory cells in response to the initial refresh command.
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