公开(公告)号：US20220084952A1

公开(公告)日：2022-03-17

申请号：US17379000

申请日：2021-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun LEE ,  Min Joo LEE ,  Wan Don KIM ,  Hyeon Jin SHIN ,  Hyun Bae LEE ,  Hyun Seok LIM

IPC: H01L23/532

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

公开(公告)号：US20190145001A1

公开(公告)日：2019-05-16

申请号：US15988067

申请日：2018-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Sun PARK ,  Ji Youn SEO ,  Ji Woon IM ,  Hyun Seok LIM ,  Byung Ho CHUN ,  Yu Seon KANG ,  Hyuk Ho KWON ,  Sung Jin PARK ,  Tae Yong EOM ,  Dong Hyeop HA

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

公开(公告)号：US20190148211A1

公开(公告)日：2019-05-16

申请号：US15993752

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn SEO ,  Byung Sun PARK ,  Sung Jin PARK ,  Ji Woon IM ,  Hyun Seok LIM ,  Byung Ho CHUN ,  Yu Seon KANG ,  Hyuk Ho KWON ,  Tae Yong EOM ,  Dae Hun CHOI ,  Dong Hyeop HA

IPC: H01L21/687 ,  H01J37/32

Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.