公开(公告)号：US20230146542A1

公开(公告)日：2023-05-11

申请号：US17828580

申请日：2022-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jae OH ,  Ik Soo KIM ,  Sang Ho RHA ,  Ji Woon IM

IPC: H01L27/108

CPC classification number: H01L27/10811 ,  H01L27/10885 ,  H01L27/10894

Abstract: A semiconductor memory device includes a cell substrate, a mold structure including a plurality of gate electrodes stacked on the cell substrate, the gate electrodes including a first ground selection line, a second ground selection line and a plurality of word lines, which are sequentially stacked, a channel structure that extends in a vertical direction that crosses an upper surface of the cell substrate and penetrates the mold structure, a partial isolation region that extends in a first direction that is parallel with the upper surface of the cell substrate and partially separates the mold structure, and a ground isolation structure that connects two partial isolation regions adjacent to each other in the first direction, extends in the vertical direction and penetrates the first ground selection line and the second ground selection line, wherein a width of the ground isolation structure increases with distance from the cell substrate.

公开(公告)号：US20200211847A1

公开(公告)日：2020-07-02

申请号：US16578245

申请日：2019-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn SEO ,  Ji Woon IM ,  Dai Hong KIM ,  Ik Soo KIM ,  Sang Ho RHA

IPC: H01L21/033 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device and a semiconductor processing apparatus are provided. The method of fabricating a semiconductor device comprises preparing a semiconductor substrate having a front side and a back side, opposing each other, and forming a material layer on the semiconductor substrate. The material layer is formed on at least a portion of the back side of the semiconductor substrate while being formed on the front side of the semiconductor substrate. The material layer formed on the at least a portion of the back side of the semiconductor substrate is removed, while the material layer formed on the front side of the semiconductor substrate remains. A semiconductor process is performed to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate.

公开(公告)号：US20210320105A1

公开(公告)日：2021-10-14

申请号：US17355272

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Deog CHOI ,  Ji Woon IM

IPC: H01L27/108 ,  B82Y10/00 ,  H01L49/02

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.

公开(公告)号：US20190148211A1

公开(公告)日：2019-05-16

申请号：US15993752

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youn SEO ,  Byung Sun PARK ,  Sung Jin PARK ,  Ji Woon IM ,  Hyun Seok LIM ,  Byung Ho CHUN ,  Yu Seon KANG ,  Hyuk Ho KWON ,  Tae Yong EOM ,  Dae Hun CHOI ,  Dong Hyeop HA

IPC: H01L21/687 ,  H01J37/32

Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

公开(公告)号：US20200381435A1

公开(公告)日：2020-12-03

申请号：US16682061

申请日：2019-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Deog CHOI ,  Ji Woon IM

IPC: H01L27/108 ,  H01L49/02 ,  B82Y10/00

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.

公开(公告)号：US20190145001A1

公开(公告)日：2019-05-16

申请号：US15988067

申请日：2018-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Sun PARK ,  Ji Youn SEO ,  Ji Woon IM ,  Hyun Seok LIM ,  Byung Ho CHUN ,  Yu Seon KANG ,  Hyuk Ho KWON ,  Sung Jin PARK ,  Tae Yong EOM ,  Dong Hyeop HA

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.