-
Patent Agency Ranking
1.发明申请METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开制造基于氮化镓的半导体发光器件的方法公开(公告)号：US20130302930A1
公开(公告)日：2013-11-14
申请号：US13887102
申请日：2013-05-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： In Joon YEO , Hyun Young KIM , Sang Yeob SONG
IPC: H01L33/00
CPC classification number: H01L33/0075 , H01L33/32
Abstract: A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer.
Abstract translation: 提供一种制造基于氮化镓（GaN）的半导体发光器件的方法。 形成发光结构，并且包括由在基板上含有镓（Ga）的氮化物半导体形成的n型半导体层，有源层和p型半导体层。 金属层设置在p型半导体层上，进行热处理以形成镓（Ga） - 金属化合物。 除去形成在p型半导体层上的镓（Ga） - 金属化合物。 电极被设置在去除了镓（Ga） - 金属化合物的p型半导体层的上表面上。 镓（Ga） - 金属化合物的形成包括在p型半导体层的表面形成镓空位。
-
公开(公告)号：US20200284533A1
公开(公告)日：2020-09-10
申请号：US16811949
申请日：2020-03-06
Applicant: Samsung Electronics Co., Ltd
Inventor： Sangmu LEE , Hyun Young KIM , Masaki SAITO , Masatoshi TAKAHASHI , Takeshi TAKAHARA , Kangtae SEO , Kazushige TAJIMA , Ryo INOHA , Tsutomu SHIMIZU
Abstract: An air conditioner including a distributor configured to distribute a fluid to a heat exchanger. The distributor comprises a main pipe; a partition defining a plurality of distribution paths in the main pipe; a first branched pipe inserted into the main pipe as much as first length, linked to a first distribution path of the plurality of distribution paths, connected to a first portion of the heat exchanger; and a second branched pipe inserted into the main pipe as much as second length different from the first length, linked to the first distribution path, connected to a second portion of the heat exchanger. A flow velocity of air exchanging heat at the first portion of the heat exchanger is faster than a flow velocity of air exchanging heat at the second portion of the heat exchanger. The first length is shorter than the second length.
-
公开(公告)号：US20160072004A1
公开(公告)日：2016-03-10
申请号：US14714117
申请日：2015-05-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Yeob SONG , Ju Heon YOON , Gi Bum KIM , Hyun Young KIM , Jong Hoon HA
CPC classification number: H01L33/40
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.
Abstract translation: 一种半导体发光器件包括：发光结构，包括第一导电类型半导体层，第二导电型半导体层和设置在其间的有源层; 设置在所述发光结构上以与所述第一导电型半导体层电连接的第一电极; 以及设置在所述发光结构上以电连接到所述第二导电类型半导体层的第二电极。 第二电极包括设置在第二导电类型半导体层上的第一层和设置在第一层上的第二层，其具有比第一层高的薄层电阻，并且其厚度小于第一层的厚度 。
-
公开(公告)号：US20210332986A1
公开(公告)日：2021-10-28
申请号：US17272422
申请日：2019-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Mu LEE , Hyun Young KIM , Seiji SATO
Abstract: The present disclosure relates to a heat exchanger and an air conditioner including the same. The heat exchanger may be provided for heat exchange between refrigerant and air. The heat exchanger may include a plurality of refrigerant tubes that are disposed with a clearance (C) therebetween in a first direction (A), in which the air moves, and are disposed to be spaced apart in a second direction (B) crossing the first direction (A) and a plurality of heat exchange fins that are disposed between the plurality of refrigerant tubes disposed to be spaced apart in the second direction (B).
-
公开(公告)号：US20200292237A1
公开(公告)日：2020-09-17
申请号：US16649115
申请日：2018-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Mu LEE , Akihiro FUJIWARA , Hyun Young KIM
Abstract: The present disclosure relates to a heat exchanger and an air conditioner improving heat exchange ability by optimizing the number of high protrusions of a heat transfer tube and a height difference between the high protrusion and a low protrusion to increase the heat transfer performance of the heat transfer tube or reduce the pressure loss in the tube. An air conditioner includes the heat exchanger including a heat transfer tube configured to allow the refrigerant to flow, fins installed on the heat transfer tube, and fin collars forming an insertion hole through which the heat transfer tube is inserted and passes, and the fin collars is in contact with the heat transfer tube by tube expansion of the heat transfer tube. The heat transfer tube includes high protrusions disposed in a spiral shape with respect to a tube axis direction of the heat transfer tube, twenty one to twenty seven of the high protrusions being formed along a circumferential direction of the heat transfer tube, and low protrusions disposed between two of the adjacent high protrusions along the circumferential direction of the heat transfer tube and having a height lower by 0.03 mm to 0.05 mm than the high protrusions.
-
-
-
-
Search Results
5
records
(took 0.013 seconds)
