公开(公告)号：US20130302930A1

公开(公告)日：2013-11-14

申请号：US13887102

申请日：2013-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Joon YEO ,  Hyun Young KIM ,  Sang Yeob SONG

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/32

Abstract: A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer.

Abstract translation: 提供一种制造基于氮化镓（GaN）的半导体发光器件的方法。 形成发光结构，并且包括由在基板上含有镓（Ga）的氮化物半导体形成的n型半导体层，有源层和p型半导体层。 金属层设置在p型半导体层上，进行热处理以形成镓（Ga） - 金属化合物。 除去形成在p型半导体层上的镓（Ga） - 金属化合物。 电极被设置在去除了镓（Ga） - 金属化合物的p型半导体层的上表面上。 镓（Ga） - 金属化合物的形成包括在p型半导体层的表面形成镓空位。

公开(公告)号：US20160359087A1

公开(公告)日：2016-12-08

申请号：US15158059

申请日：2016-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gong Shin LEE ,  In Joon YEO ,  Sung Won KO ,  Shi Young LEE ,  Byung Chul CHOI

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  G02F1/133 ,  F21V29/70 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1368 ,  F21V8/00 ,  F21K99/00 ,  H01L33/06 ,  G02F1/1333

CPC classification number: G02B6/0068 ,  F21K9/233 ,  F21K9/238 ,  F21K9/27 ,  F21K9/278 ,  F21S8/02 ,  F21V23/005 ,  F21V23/006 ,  F21V23/02 ,  F21V29/773 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02B6/0055 ,  G02B6/0073 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: Provided is a semiconductor light emitting device including: a light emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode structure penetrating through the second semiconductor layer and the active layer to be connected to the first semiconductor layer, the first electrode structure having at least one contact region; and a second electrode structure connected to the second semiconductor layer, wherein the first semiconductor layer includes a protrusion portion provided on the at least one contact region and a recess portion provided in a circumferential portion of the protrusion portion.

Abstract translation: 提供一种半导体发光器件，包括：发光堆叠，包括第一半导体层，有源层和第二半导体层; 穿过所述第二半导体层的第一电极结构和要连接到所述第一半导体层的有源层，所述第一电极结构具有至少一个接触区域; 以及连接到第二半导体层的第二电极结构，其中第一半导体层包括设置在至少一个接触区域上的突出部分和设置在突出部分的圆周部分中的凹部。