专利检索 ap:("Samsung Electronics Co., Ltd.") AND inv:"Hyungjoon KWON" 第 1 页

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发明申请
PATTERNING METHODS, METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME, AND SEMICONDUCTOR DEVICES FABRICATED THEREBY 审中-公开

公开(公告)号：US20170256709A1

公开(公告)日：2017-09-07

申请号：US15598605

申请日：2017-05-18

申请人： Samsung Electronics Co., Ltd.

发明人： Jongchul PARK , Hyungjoon KWON , lnho KIM , Jongsoon PARK

IPC分类号： H01L43/12 , H01L21/3213

CPC分类号： H01L43/12 , H01L21/32131 , H01L27/1087 , H01L27/222 , H01L43/08

摘要： A patterning method includes forming an etch-target layer on a substrate, forming mask patterns on the etch-target layer, and etching the etch-target layer using the mask patterns as an etch mask to form patterns spaced apart from each other. The etching process of the etch-target layer includes irradiating the etch-target layer with an ion beam, whose incident energy ranges from 600 eV to 10 keV. A recess region is formed in the etch-target layer between the mask patterns, and the ion beam is incident onto a bottom surface of the recess region at a first angle with respect to a top surface of the substrate and is incident onto an inner side surface of the recess region at a second angle with respect to the inner side surface of the recess region. The first angle ranges from 50° to 90° and the second angle ranges from 0° to 40°.