公开(公告)号：US20230408574A1

公开(公告)日：2023-12-21

申请号：US18240957

申请日：2023-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Meehyun Lim ,  Sungyeol Kim ,  Hyungjung Yong ,  Jinyeong Yun

IPC: G01R31/28 ,  H01L25/065 ,  H01L23/00

CPC classification number: G01R31/2803 ,  H01L25/0657 ,  H01L24/14 ,  G01R31/2815

Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.

公开(公告)号：US20230118000A1

公开(公告)日：2023-04-20

申请号：US17970242

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Lim ,  Sungyeol Kim ,  Yongwon Cho ,  Younghwan Choi ,  Chunyoon Park ,  Seungbo Shim ,  Hyungjung Yong ,  Jaejoong Lee

IPC: H01J37/32

Abstract: A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.

公开(公告)号：US11782085B2

公开(公告)日：2023-10-10

申请号：US16924971

申请日：2020-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Meehyun Lim ,  Sungyeol Kim ,  Hyungjung Yong ,  Jinyeong Yun

IPC: G01R31/28 ,  H01L23/00 ,  H01L25/065

CPC classification number: G01R31/2803 ,  G01R31/2815 ,  H01L24/14 ,  H01L25/0657

Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.

公开(公告)号：US20210156904A1

公开(公告)日：2021-05-27

申请号：US16924971

申请日：2020-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Meehyun Lim ,  Sungyeol Kim ,  Hyungjung Yong ,  Jinyeong Yun

IPC: G01R31/28 ,  H01L23/00 ,  H01L25/065

Abstract: A test method for a semiconductor device includes determining a contact failure between a first semiconductor chip and a second semiconductor chip during assembly of a semiconductor package including the first semiconductor chip and the second semiconductor chip, using a test circuit embedded in the first semiconductor chip, and after the assembly of the semiconductor package, determining whether the semiconductor package is defective by using the test circuit.