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公开(公告)号:US11380706B2
公开(公告)日:2022-07-05
申请号:US16936888
申请日:2020-07-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangyong Park , Hyunseok Na , Jaeduk Lee
IPC: H01L27/11582 , H01L27/11556 , H01L27/11565 , H01L27/11519
Abstract: An integrated circuit device includes a plurality of conductive lines extending in a horizontal direction parallel to a main surface of a substrate and overlapping one another in a vertical direction vertical to the main surface, on the substrate, a plurality of insulation layers each between two adjacent conductive lines of the plurality of conductive lines to extend in the horizontal direction, a channel layer extending in the vertical direction in a channel hole passing through the plurality of conductive lines and the plurality of insulation layers, and a plurality of outer blocking dielectric layers between the plurality of conductive lines and the channel layer, in at least some of the plurality of conductive lines, wherein a width of each of the plurality of outer blocking dielectric layers in the horizontal direction increases toward the main surface.
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公开(公告)号:US11974434B2
公开(公告)日:2024-04-30
申请号:US17824821
申请日:2022-05-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangyong Park , Hyunseok Na , Jaeduk Lee
Abstract: An integrated circuit device includes a plurality of conductive lines extending in a horizontal direction parallel to a main surface of a substrate and overlapping one another in a vertical direction vertical to the main surface, on the substrate, a plurality of insulation layers each between two adjacent conductive lines of the plurality of conductive lines to extend in the horizontal direction, a channel layer extending in the vertical direction in a channel hole passing through the plurality of conductive lines and the plurality of insulation layers, and a plurality of outer blocking dielectric layers between the plurality of conductive lines and the channel layer, in at least some of the plurality of conductive lines, wherein a width of each of the plurality of outer blocking dielectric layers in the horizontal direction increases toward the main surface.
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