公开(公告)号：USD786247S1

公开(公告)日：2017-05-09

申请号：US29547817

申请日：2015-12-08

Applicant: Samsung Electronics Co., Ltd.

Designer： Taeyeon Won ,  Sangyong Park ,  Jinsu Park

公开(公告)号：USD747719S1

公开(公告)日：2016-01-19

申请号：US29502672

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Taeyeon Won ,  Sangyong Park ,  Jinsu Park

公开(公告)号：US11804224B2

公开(公告)日：2023-10-31

申请号：US17260294

申请日：2019-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooup Kwon ,  Kyounggu Woo ,  Sangyong Park ,  Jongbeom Lee

IPC: G10L15/22 ,  G10L15/04 ,  G10L15/30 ,  G10L17/12

CPC classification number: G10L15/22 ,  G10L15/04 ,  G10L15/30 ,  G10L17/12 ,  G10L2015/223

Abstract: Various embodiments of the present disclosure relate to a method for providing an intelligent assistance service and an electronic device for performing the same. According to an embodiment, an electronic device comprises at least one communication circuit, at least one microphone, at least one speaker, at least one processor operatively connected to the communication circuit, the microphone, and the speaker, and at least one memory electrically connected to the processor, wherein the memory has instructions stored therein which, when executed, cause the processor to receive a wake-up utterance calling a voice-based intelligent assistance service, in response to the wake-up utterance, to identify a session which is in progress by the voice-based intelligent assistance service, and, upon receiving a control command, to provide the control command to an external device through the session on the basis of the session. Other embodiments are also possible.

公开(公告)号：USD743385S1

公开(公告)日：2015-11-17

申请号：US29519183

申请日：2015-03-03

Applicant: Samsung Electronics Co., Ltd.

Designer： Sung Jin Ann ,  Sinwi Moon ,  Sangyong Park

公开(公告)号：USD722985S1

公开(公告)日：2015-02-24

申请号：US29486780

申请日：2014-04-02

Applicant: Samsung Electronics Co., Ltd.

Designer： Tae Yeon Won ,  Sangyong Park ,  JinSu Park

公开(公告)号：USD799443S1

公开(公告)日：2017-10-10

申请号：US29569590

申请日：2016-06-29

Applicant: Samsung Electronics Co., Ltd.

Designer： Sangyong Park ,  Sungjin Ann ,  Kihong Kim

公开(公告)号：US11974434B2

公开(公告)日：2024-04-30

申请号：US17824821

申请日：2022-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyong Park ,  Hyunseok Na ,  Jaeduk Lee

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/10 ,  H10B43/10

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/10 ,  H10B43/10

Abstract: An integrated circuit device includes a plurality of conductive lines extending in a horizontal direction parallel to a main surface of a substrate and overlapping one another in a vertical direction vertical to the main surface, on the substrate, a plurality of insulation layers each between two adjacent conductive lines of the plurality of conductive lines to extend in the horizontal direction, a channel layer extending in the vertical direction in a channel hole passing through the plurality of conductive lines and the plurality of insulation layers, and a plurality of outer blocking dielectric layers between the plurality of conductive lines and the channel layer, in at least some of the plurality of conductive lines, wherein a width of each of the plurality of outer blocking dielectric layers in the horizontal direction increases toward the main surface.

公开(公告)号：USD740770S1

公开(公告)日：2015-10-13

申请号：US29486789

申请日：2014-04-02

Applicant: Samsung Electronics Co., Ltd.

Designer： Tae Yeon Won ,  Sangyong Park ,  JinSu Park

公开(公告)号：US20250062229A1

公开(公告)日：2025-02-20

申请号：US18660743

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhee Lee ,  Chulmin Choi ,  Sangyong Park ,  Dajin Kim ,  Taeho Kim ,  Gunwook Yoon ,  Taehun Kim ,  Seungjae Baik ,  Jaeduk Lee

IPC: H01L23/528 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device includes a first semiconductor structure that includes a first substrate, circuit devices on the first substrate, a lower interconnection structure, and a lower bonding structure; and a second semiconductor structure disposed on and connected to the first semiconductor structure The second semiconductor structure includes a stack structure; channel structures that including a first portion that penetrate through the stack structure in the vertical direction and a second portion that extends upward from the first portion; a first material layer disposed on the stack structure and the channel structure and having first conductivity; and a second material layer disposed between the first material layer and the stack structure and having second conductivity., The first material layer overlaps second portions of the channel structures in the vertical direction, and the second material layer does not overlap the second portions of the channel structures in the vertical direction.

公开(公告)号：US11380706B2

公开(公告)日：2022-07-05

申请号：US16936888

申请日：2020-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyong Park ,  Hyunseok Na ,  Jaeduk Lee

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11519

Abstract: An integrated circuit device includes a plurality of conductive lines extending in a horizontal direction parallel to a main surface of a substrate and overlapping one another in a vertical direction vertical to the main surface, on the substrate, a plurality of insulation layers each between two adjacent conductive lines of the plurality of conductive lines to extend in the horizontal direction, a channel layer extending in the vertical direction in a channel hole passing through the plurality of conductive lines and the plurality of insulation layers, and a plurality of outer blocking dielectric layers between the plurality of conductive lines and the channel layer, in at least some of the plurality of conductive lines, wherein a width of each of the plurality of outer blocking dielectric layers in the horizontal direction increases toward the main surface.