公开(公告)号：US20200090722A1

公开(公告)日：2020-03-19

申请号：US16507536

申请日：2019-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Min Lee ,  Hyunsung JUNG

IPC: G11C11/16 ,  G11C11/4074 ,  G11C11/408

Abstract: Disclosed are memory devices including a variable resistance memory cell and a word line control circuit. A memory device including a variable resistance memory cell including a variable resistance element, a first cell transistor, and a second cell transistor, a first end of the variable resistance element connected to a bit line, a second end of the variable resistance element, a first end of the first cell transistor, and a first end of the second cell transistor connected to the common node, a second end of the first cell transistor and a second end of the second cell transistor connected to a source line, and a word line control circuit configured to separate a sub word line connected to a gate electrode of the second cell transistor from a word line connected to a gate electrode of the first cell transistor in a first write operation and to connect the word line and the sub word line to each other in a second write operation may be provided.