公开(公告)号：US20230230937A1

公开(公告)日：2023-07-20

申请号：US17930820

申请日：2022-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunuk Jeon ,  Yuseon Kang ,  Young-Min Ko ,  Dong Young Kim

IPC: H01L23/00 ,  H01L23/535 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

CPC classification number: H01L23/562 ,  H01L23/535 ,  H01L23/5329 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: Disclosed are a three-dimensional semiconductor memory device and an electronic system including the same. A semiconductor device includes a substrate, a cell array structure including a plurality of electrodes stacked on the substrate, a vertical channel structure that penetrates the cell array structure and is connected to the substrate, a conductive pad in an upper portion of the vertical channel structure, an interlayer insulating layer on the cell array structure, a bit line on the cell array structure, a bit line contact electrically connecting the bit line to the conductive pad, and a first stress release layer between the cell array structure and the bit line on a top surface of the interlayer insulating layer. The first stress release layer includes organosilicon polymer, and a carbon concentration of the first stress release layer is higher than that of the interlayer insulating layer.

公开(公告)号：US20240414915A1

公开(公告)日：2024-12-12

申请号：US18403487

申请日：2024-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunuk Jeon ,  Dong Young Kim ,  Byeongheon Min

IPC: H10B43/27 ,  H10B43/40

Abstract: Disclosed are three-dimensional semiconductor memory devices and electronic systems. The three-dimensional semiconductor memory device comprises stack structures that include interlayer dielectric layers and gate electrodes that are alternately stacked on a substrate, vertical channel structures that penetrate the stack structures, and a separation structure that runs in a first direction across between the stack structures. The separation structure includes a first portion that extends in a vertical direction from the substrate, and a second portion on the first portion and including a material different from a material of the first portion. A top surface of the second portion is at a level the same as that of top surfaces of the vertical channel structures.