公开(公告)号：US20190287766A1

公开(公告)日：2019-09-19

申请号：US16182737

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGJEAN JEON ,  Jinyoung PARK ,  CHANHOON PARK ,  Hoyong PARK ,  JIN YOUNG BANG ,  JungHwan UM ,  IL SUP CHOI ,  Je-Woo HAN

IPC: H01J37/32 ,  H01L21/683

Abstract: A system for fabricating a semiconductor device may include a chamber, an electrostatic chuck used to load a substrate, a power source supplying an RF power to the electrostatic chuck, an impedance matcher between the power source and the electrostatic chuck, and a power transmission unit connecting the electrostatic chuck to the impedance matcher. The power transmission unit may include a power rod, which is connected to the electrostatic chuck and has a first outer diameter, and a coaxial cable. The coaxial cable may include an inner wire, an outer wire, and a dielectric material between the outer and inner wires. The inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter. The outer wire is connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter. A ratio of the first inner diameter to the second outer diameter is greater than a dielectric constant of the dielectric material and less than three times the dielectric constant of the dielectric material.