公开(公告)号：US20200219808A1

公开(公告)日：2020-07-09

申请号：US16441042

申请日：2019-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon Gyu HWANG ,  Kyoung Woo LEE ,  YoungWoo CHO ,  IL SUP KIM ,  Su Hyun BARK ,  Young-Ju PARK ,  Jong Min BAEK ,  Min HUH

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.