公开(公告)号：US20190131171A1

公开(公告)日：2019-05-02

申请号：US15959783

申请日：2018-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Chan Gwak ,  HWI CHAN JUN ,  HEON JONG SHIN ,  SO RA YOU ,  SANG HYUN LEE ,  IN CHAN HWANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/66 ,  H01L29/417

Abstract: A semiconductor device includes a plurality of active regions spaced apart from each other and extending linearly in parallel on a substrate. A gate electrode crosses the plurality of active regions, and respective drain regions are on and/or in respective ones of the active regions on a first side of the gate electrode and respective source regions are on and/or in respective ones of the active regions on a second side of the gate electrode. A drain plug is disposed on the drain regions and a source plug is disposed on the source regions. A gate plug is disposed on the gate electrode between the drain plug and the source plug such that a straight line passing through a center of the drain plug and a center of the source plug intersects the gate plug.