公开(公告)号：US20250125182A1

公开(公告)日：2025-04-17

申请号：US18628404

申请日：2024-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUN HO CHOI ,  JAEHWAN KIM ,  YONG-HO BAEK ,  HYEOK-JIN JEONG ,  HO YUNG CHONG

IPC: H01L21/687 ,  H01L21/673

Abstract: Disclosed are substrate rotating apparatuses, substrate processing systems, and substrate processing methods. The substrate rotating apparatus comprises vertically arranged stages and a rotary driver that turns the stages upside down. The stage includes a lower support assembly and an upper support assembly adjacent to the lower support assembly. The lower support assembly includes a lower support member having a lower support surface that supports one surface of a substrate. The upper support assembly includes upper support members. The upper support members are spaced apart from each other in a horizontal direction. A substrate placement space is between the upper support members. The upper support member includes an upper support surface that supports another surface of the substrate. The upper support surface is inclined toward the substrate placement space and makes an acute angle with the horizontal direction.

公开(公告)号：US20210064807A1

公开(公告)日：2021-03-04

申请号：US16859323

申请日：2020-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIN KIM ,  BYUNGMOO KIM ,  JAEHWAN KIM ,  JUNSU JEON

IPC: G06F30/392 ,  G06F30/398

Abstract: A method of designing a layout of a semiconductor device includes determining from among a plurality of integrated circuit (IC) blocks in the semiconductor device a selection IC block for which a layout is to be changed, changing an spacing interval at which fin structures included in the selection IC block are spaced apart from each other in a first direction from a first spacing interval to a second spacing interval, and determining in the selection IC block locations of source/drain regions connected to the fin structures spaced apart from each other in the first direction at the second spacing interval.