公开(公告)号：US20210305188A1

公开(公告)日：2021-09-30

申请号：US17143224

申请日：2021-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JOONGWON SHIN ,  YEONJIN LEE ,  INYOUNG LEE ,  JIMIN CHOI ,  JUNG-HOON HAN

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.