-
公开(公告)号:US20210305188A1
公开(公告)日:2021-09-30
申请号:US17143224
申请日:2021-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: JOONGWON SHIN , YEONJIN LEE , INYOUNG LEE , JIMIN CHOI , JUNG-HOON HAN
Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.
-
公开(公告)号:US20230067386A1
公开(公告)日:2023-03-02
申请号:US17706013
申请日:2022-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: MINJUNG CHOI , YEONJIN LEE , JEONIL LEE , JONGMIN LEE
IPC: H01L23/00 , H01L23/58 , H01L23/522 , H01L23/528 , H01L23/48
Abstract: A semiconductor device includes; a semiconductor substrate including a chip area and a scribe lane area, a low-k layer on the semiconductor substrate, an interlayer insulating layer on the low-k layer, a trench area in the scribe lane area, a gap-fill insulating layer in the trench area and vertically extending from the semiconductor substrate through the low-k layer and the interlayer insulating layer to expose an upper surface of the gap-fill insulating layer through the interlayer insulating layer, and a first metal liner covering a side surface of the gap-fill insulating layer and disposed between the gap-fill insulating layer and the low-k layer and between the gap-fill insulating layer and the interlayer insulating layer.
-