公开(公告)号：US20250133731A1

公开(公告)日：2025-04-24

申请号：US18739398

申请日：2024-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JOONGWON SHIN ,  SEHYUN HWANG ,  JONG-MIN LEE

IPC: H10B12/00 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

Abstract: A semiconductor device includes a first interlayer insulating layer on a substrate and including an upper surface at a first level, a second interlayer insulating layer on the first interlayer insulating layer, and including a material with less density than that of the first interlayer insulating layer, a first contact in the first interlayer insulating layer and having an upper surface at a second level higher than the first level, a through via in the first interlayer insulating layer and substrate, and having an upper surface at a third level higher than the second level, a first wiring in the second interlayer insulating layer, in contact with the first contact, and having a lower surface at a fourth level lower than the first level, and a second wiring in the second interlayer insulating layer, in contact with the through via, and having a fifth level lower than the fourth level.

公开(公告)号：US20210305188A1

公开(公告)日：2021-09-30

申请号：US17143224

申请日：2021-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JOONGWON SHIN ,  YEONJIN LEE ,  INYOUNG LEE ,  JIMIN CHOI ,  JUNG-HOON HAN

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a conductive pad on a first surface of the semiconductor substrate, a passivation layer on the first surface of the semiconductor substrate, the passivation layer having a first opening that exposes the conductive pad, an organic dielectric layer on the passivation layer, the organic dielectric layer having a second opening, and a bump structure on the conductive pad and in the first and second openings. The organic dielectric layer includes a material different from a material of the passivation layer. The second opening is spatially connected to the first opening and exposes a portion of the passivation layer. The bump structure includes a pillar pattern in contact with the passivation layer and the organic dielectric layer.