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公开(公告)号：US20210005806A1
公开(公告)日：2021-01-07
申请号：US16789525
申请日：2020-02-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： JUNGHOON BAK , WOOJIN KIM , JUNGHWAN MOON
Abstract: Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.
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