公开(公告)号：US20210005806A1

公开(公告)日：2021-01-07

申请号：US16789525

申请日：2020-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHOON BAK ,  WOOJIN KIM ,  JUNGHWAN MOON

IPC: H01L43/02 ,  H01L43/12

Abstract: Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.

公开(公告)号：US20170025472A1

公开(公告)日：2017-01-26

申请号：US15284519

申请日：2016-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOOJIN KIM ,  KI WOONG KIM ,  WOO CHANG LIM

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.

Abstract translation: 磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。 自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。 第一自由层可以设置在第二自由层和隧道势垒之间。 第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。 第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。 具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。