公开(公告)号：US20240014252A1

公开(公告)日：2024-01-11

申请号：US18119896

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hong Sik CHAE ,  Tae Kyun KIM ,  Ji Hoon AN ,  Hyun-Suk LEE ,  Gi Hee CHO ,  Jae Hyoung CHOI

IPC: H01L21/02

CPC classification number: H01L28/75 ,  H01L28/90 ,  H01L28/86

Abstract: A semiconductor device includes a substrate, first and second supporter patterns spaced vertically from the substrate, the second supporter pattern being spaced vertically from the first supporter pattern, a lower electrode hole extending vertically on the substrate, a lower electrode inside the lower electrode hole, contacting a sidewall of the first and second supporter patterns, the lower electrode including a first layer along a portion of a sidewall and bottom surface of the lower electrode hole, a second layer between the first layers, and a third layer on an upper surface of the first and second layers, the first and second layers including a material different from the second layer, and a sidewall of at least a portion of the third layer being concave toward the third layer, overlapping the second layer in the vertical direction, and being spaced apart from the second layer in the vertical direction.

公开(公告)号：US20230061185A1

公开(公告)日：2023-03-02

申请号：US17708098

申请日：2022-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Intak JEON ,  Han Jin LIM ,  Hyung Suk JUNG ,  Jae Hyoung CHOI

IPC: H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device comprises a lower electrode, a lower dielectric layer on the lower electrode, an upper electrode on the lower dielectric layer, an upper dielectric layer formed between the lower dielectric layer and the upper electrode, and an interposed electrode film formed between the lower dielectric layer and the upper dielectric layer, wherein the upper dielectric layer includes titanium oxide.