公开(公告)号：US20210312989A1

公开(公告)日：2021-10-07

申请号：US17126933

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hak YUN ,  Jae Woo IM ,  Sang-Hyun JOO

IPC: G11C16/08 ,  G11C16/04

Abstract: A nonvolatile memory device and an operating method are provided. The nonvolatile memory device includes a memory cell array including a plurality of planes, each plane including a plurality of memory blocks, an address decoder connected to the memory cell array, a voltage generator configured to apply an operating voltage to the address decoder, a page buffer circuit including page buffers corresponding to each of the planes, a data input/output circuit connected to the page buffer circuit configured to input and output data and a control unit configured to control the operation of the address decoder, the voltage generator, the page buffer circuit, and the data input/output circuit, wherein the control unit is configured to operate in a multi-operation or a single operation by checking whether a memory block of an access address is a bad block.

公开(公告)号：US20210233597A1

公开(公告)日：2021-07-29

申请号：US17026713

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Won YOON ,  Jae-Hak YUN ,  Jae Woo IM ,  Sang-Hyun JOO

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G11C16/26 ,  G11C16/30

Abstract: A nonvolatile memory device includes processing circuitry configured to apply a sub-voltage to the first word lines, determine a desired first read voltage based on a threshold voltage distribution of a plurality of first memory cells connected to the first word lines, apply the sub-voltage to the second word lines, determine a desired second read voltage based on a threshold voltage distribution of a plurality of second memory cells connected to the second word lines, apply the desired first read voltage to the first word lines while simultaneously reading the first memory cells connected to the first word lines, and apply the desired second read voltage different from the desired first read voltage to the second word lines while simultaneously reading the second memory cells connected to the second word lines.