公开(公告)号：US20210233597A1

公开(公告)日：2021-07-29

申请号：US17026713

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Won YOON ,  Jae-Hak YUN ,  Jae Woo IM ,  Sang-Hyun JOO

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G11C16/26 ,  G11C16/30

Abstract: A nonvolatile memory device includes processing circuitry configured to apply a sub-voltage to the first word lines, determine a desired first read voltage based on a threshold voltage distribution of a plurality of first memory cells connected to the first word lines, apply the sub-voltage to the second word lines, determine a desired second read voltage based on a threshold voltage distribution of a plurality of second memory cells connected to the second word lines, apply the desired first read voltage to the first word lines while simultaneously reading the first memory cells connected to the first word lines, and apply the desired second read voltage different from the desired first read voltage to the second word lines while simultaneously reading the second memory cells connected to the second word lines.

公开(公告)号：US20220139470A1

公开(公告)日：2022-05-05

申请号：US17580062

申请日：2022-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Won YOON ,  Sang-Hyun JOO

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/16 ,  G11C16/28 ,  G11C16/10

Abstract: A nonvolatile memory device includes a memory block with an unused line connected to dummy cells and used lines connected to normal cells, and a controller which applies an erase voltage to the memory block, applies an unused line erase voltage to the unused line, and applies a word line erase voltage to the used lines during an erase operation. The dummy cells are not programmed during a program operation while the normal cells are programmed, the unused line erase voltage transits from a first voltage to a floating voltage at a first time point, and the controller reads the dummy cells and controls at least one of the magnitude of the first voltage and the first time point based on the result of reading the dummy cells.

公开(公告)号：US20210225452A1

公开(公告)日：2021-07-22

申请号：US17035188

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Won YOON ,  Sang-Hyun JOO

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28

Abstract: A nonvolatile memory device includes a memory block with an unused line connected to dummy cells and used lines connected to normal cells, and a controller which applies an erase voltage to the memory block, applies an unused line erase voltage to the unused line, and applies a word line erase voltage to the used lines during an erase operation. The dummy cells are not programmed during a program operation while the normal cells are programmed, the unused line erase voltage transits from a first voltage to a floating voltage at a first time point, and the controller reads the dummy cells and controls at least one of the magnitude of the first voltage and the first time point based on the result of reading the dummy cells.