公开(公告)号：US09426394B2

公开(公告)日：2016-08-23

申请号：US14516907

申请日：2014-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Chan Kim ,  Seung-Sik Kim ,  Tae-Han Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Min-Seok Oh ,  Moo-Sup Lim

IPC: H04N5/361 ,  H04N5/359 ,  H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/361 ,  H04N5/359 ,  H04N5/3651 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/378

Abstract: A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Abstract translation: 一种处理来自图像传感器的信号的方法，该图像传感器输出具有光信号的图像传感器中的像素行的信号，输出不具有光信号的图像传感器中的像素行的信号，以及校正来自具有光信号的像素行的信号 基于与不具有光信号的像素行对应的信号。

公开(公告)号：US09392203B2

公开(公告)日：2016-07-12

申请号：US14499658

申请日：2014-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Seok Oh ,  Seung-Sik Kim ,  Young-Chan Kim ,  Tae-Han Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Moo-Sub Lim

IPC: H04N5/361 ,  H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H04N5/361 ,  H04N5/3745

Abstract: A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value.

Abstract translation: 像素阵列包括用于接收光的像素阵列，要阻止接收光的第一像素，以及基于来自第一像素的信号调整从阵列中的像素输出的信号的电路。 从阵列中的像素输出的信号包括第一误差值。 该电路基于来自第一像素的信号，减少来自阵列中的像素的信号中的第一误差值。 电路还可以基于来自第二像素的信号来减少从阵列中的像素输出的信号中的第二误差值。 第一和第二像素可以在像素阵列之外。 第一和第二误差值可以是存储二极管泄漏值和暗电流值。

公开(公告)号：US09743022B2

公开(公告)日：2017-08-22

申请号：US14851396

申请日：2015-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Seok Oh ,  Seung-Sik Kim ,  Young-Chan Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Ji-Won Lee ,  Moo-Sup Lim

IPC: H04N5/217 ,  H04N5/335 ,  H04N5/359

CPC classification number: H04N5/3592

Abstract: An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.

公开(公告)号：US10957726B2

公开(公告)日：2021-03-23

申请号：US16108613

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Kyu Lee ,  Hyuk-Soon Choi ,  Seung-Sik Kim

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

公开(公告)号：US10396119B2

公开(公告)日：2019-08-27

申请号：US15905007

申请日：2018-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Chan Kim ,  Seung-Sik Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

公开(公告)号：US09929204B2

公开(公告)日：2018-03-27

申请号：US14660570

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Chan Kim ,  Seung-Sik Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

CPC classification number: H01L27/14683 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/3559

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

公开(公告)号：US09615041B2

公开(公告)日：2017-04-04

申请号：US14607133

申请日：2015-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Sik Kim ,  Young-Chan Kim ,  Tae-Han Kim ,  Eun-Sub Shim ,  Dong-Joo Yang ,  Min-Seok Oh ,  Moo-Sup Lim

IPC: H04N5/3745 ,  H01L27/30 ,  H01L27/146 ,  H01L27/148

CPC classification number: H04N5/3745 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/307

Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.