公开(公告)号：US10922472B2

公开(公告)日：2021-02-16

申请号：US16458225

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-ho Kang ,  Jae-myoung Lee

IPC: G06F30/398 ,  G03F1/36 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device is provided as follows. A mask layout for forming a target pattern of a multi-height cell including a rectangular notch is generated. A preliminary rectangular mask pattern corresponding to the rectangular notch is detected from the mask layout. The multi-height cell is formed of standard cells arranged and connected to each other in a direction and the rectangular notch is disposed between two adjacent standard cells. A hexagonal mask pattern is, in response to the detecting of the preliminary rectangular mask pattern, placed on at least one short side of the preliminary rectangular mask pattern to generate a combined mask pattern. An outer boundary of the combined mask pattern remains in the mask layout and corresponds to the rectangular notch of the target pattern. A target mask and the semiconductor device are formed based on the combined mask pattern.