公开(公告)号：US10553291B2

公开(公告)日：2020-02-04

申请号：US16015959

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yun Lee ,  Il-han Park ,  Jun-yong Park ,  Byung-soo Kim

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/08 ,  G11C11/56 ,  H01L27/11582

Abstract: Provided is a nonvolatile memory device and an operating method thereof. The operating method for programming a first memory block from among a plurality of memory blocks includes: programming a first word line connected to the first memory block by sequentially executing first to Nth (N is a natural number) programming loops; applying a voltage generated by regulating a first pump voltage of a first charge pump to the first word line as a dummy verifying voltage after the programming is completed; generating a first detection count based on the first pump voltage and a first reference voltage; and outputting a bad block setting signal for setting the first memory block as a bad block based on a result of comparing the first detection count with the first reference count.