公开(公告)号：US20250016974A1

公开(公告)日：2025-01-09

申请号：US18407789

申请日：2024-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Chang ,  Changsik Kim ,  Jaejoon Song

IPC: H10B12/00 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a first transistor and a second transistor on the substrate, a bit line electrically connected to the first transistor, a channel layer on the bit line, a gate insulating layer on the channel layer, a word line on the gate insulating layer, a landing pad electrically connected to the channel layer, a connection pad electrically connected to the word line and the second transistor, and a division structure separating the landing pad from the connection pad. The division structure includes an intervening portion between the landing pad and the connection pad.

公开(公告)号：US20250016991A1

公开(公告)日：2025-01-09

申请号：US18757681

申请日：2024-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaejoon Song ,  Julpin Park ,  Deokhwan Choi

IPC: H10B12/00

Abstract: An integrated circuit memory device (e.g., DRAM) includes a substrate having a bit line thereon, and an electrically insulating region having a first opening therein, which exposes a first portion of the bit line. A first semiconductor active layer is provided, which lines first and second opposing sidewalls of the first opening and the exposed first portion of the bit line, such that a direct electrical connection is provided between the exposed first portion of the bit line and a portion of the first semiconductor active layer extending between the first and second sidewalls of the first opening. A first word line is provided on a first portion of the first semiconductor active layer extending opposite the first sidewall of the first opening, and a second word line is provided on a second portion of the first semiconductor active layer extending opposite the second sidewall of the first opening.