SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20250016974A1

    公开(公告)日:2025-01-09

    申请号:US18407789

    申请日:2024-01-09

    Abstract: A semiconductor device includes a substrate, a first transistor and a second transistor on the substrate, a bit line electrically connected to the first transistor, a channel layer on the bit line, a gate insulating layer on the channel layer, a word line on the gate insulating layer, a landing pad electrically connected to the channel layer, a connection pad electrically connected to the word line and the second transistor, and a division structure separating the landing pad from the connection pad. The division structure includes an intervening portion between the landing pad and the connection pad.

    SEMICONDUCTOR DEVICE INCLUDING CHANNEL STRUCTURE

    公开(公告)号:US20240072175A1

    公开(公告)日:2024-02-29

    申请号:US18300579

    申请日:2023-04-14

    CPC classification number: H01L29/7869 H01L29/78642 H10B12/315

    Abstract: A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically connected to the channel structure. The channel structure includes a main channel portion including an oxide semiconductor layer having a first composition, and a channel contact portion between the main channel portion and the conductive contact pattern. The channel contact portion is in contact with the conductive contact pattern and includes a material having a second composition that is different from the first composition.

Patent Agency Ranking