公开(公告)号：US20240072175A1

公开(公告)日：2024-02-29

申请号：US18300579

申请日：2023-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhwa Song ,  Changsik Kim ,  Jaewon Na ,  Deokhwan Choi

IPC: H01L29/786 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/78642 ,  H10B12/315

Abstract: A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically connected to the channel structure. The channel structure includes a main channel portion including an oxide semiconductor layer having a first composition, and a channel contact portion between the main channel portion and the conductive contact pattern. The channel contact portion is in contact with the conductive contact pattern and includes a material having a second composition that is different from the first composition.