公开(公告)号：US10410937B2

公开(公告)日：2019-09-10

申请号：US16035991

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Ik Park ,  Bong Seok Kim ,  Souk Kim ,  Yu Sin Yang ,  Soo Seok Lee

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/762 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.