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公开(公告)号：US11017525B2
公开(公告)日：2021-05-25
申请号：US16541380
申请日：2019-08-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyung Ahn , Souk Kim , Joon Seo Song , Young Hoon Sohn , Yu Sin Yang
Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.
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2.发明授权Method of manufacturing a semiconductor device using semiconductor measurement system 有权使用半导体测量系统制造半导体器件的方法公开(公告)号：US09583402B2
公开(公告)日：2017-02-28
申请号：US14794813
申请日：2015-07-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Yoon Ryu , Wooseok Ko , Souk Kim , Yusin Yang , Sangkil Lee , Chungsam Jun , Kwanwoo Ryu
CPC classification number: H01L22/12 , H01L21/67173 , H01L22/20
Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中，对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析，确定是否满足形成第一层和/或图案所引起的参数。
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公开(公告)号：US12092656B2
公开(公告)日：2024-09-17
申请号：US17721522
申请日：2022-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungyoon Ryu , Seungbum Hong , Kwangeun Kim , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01R1/06727 , G01R1/04
Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
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公开(公告)号：US20230079008A1
公开(公告)日：2023-03-16
申请号：US17718423
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunchul Kim , Souk Kim , Younghoon Sohn
IPC: F16F15/02
Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.
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公开(公告)号：US10373796B2
公开(公告)日：2019-08-06
申请号：US15084059
申请日：2016-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
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Patent Agency Ranking
公开(公告)号：US12110938B2
公开(公告)日：2024-10-08
申请号：US17718423
申请日：2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunchul Kim , Souk Kim , Younghoon Sohn
IPC: F16F15/02
CPC classification number: F16F15/02
Abstract: A vibration isolation table of the disclosure may include a lower structure including a plurality of block structures, a middle structure on the lower structure, and an upper structure on the middle structure. The plurality of block structures may be spaced apart from one another such that a space is formed between adjacent ones of the plurality of block structures. At least one of the lower structure and the upper structure may include high attenuation concrete.
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7.发明公开公开(公告)号：US20230194567A1
公开(公告)日：2023-06-22
申请号：US17878414
申请日：2022-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangeun Kim , Seungbum Hong , Sungyoon Ryu , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01Q40/00 , H01L22/12 , G01Q70/10 , H01L27/10876
Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.
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公开(公告)号：US10410937B2
公开(公告)日：2019-09-10
申请号：US16035991
申请日：2018-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jang Ik Park , Bong Seok Kim , Souk Kim , Yu Sin Yang , Soo Seok Lee
IPC: H01L21/00 , H01L21/66 , H01L21/762 , H01L21/78
Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.
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公开(公告)号：US20160293379A1
公开(公告)日：2016-10-06
申请号：US15084059
申请日：2016-03-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Souk Kim , Chung-sam Jun , Woo-seok Ko , Sang-Kil Lee , Kwang-il Shin , Yu-sin Yang , Min-chul Yoon
CPC classification number: H01J37/222 , H01J37/20 , H01J37/28 , H01J2237/20214 , H01J2237/226 , H01J2237/2817
Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
Abstract translation: 检查晶片的方法可以包括：将晶片装载到台上，所述晶片在其上具有多个管芯; 晶片的定位使得晶片上的多个电子束列分别面对晶片上的多个管芯中的每一个的部分区域; 通过使用电子束柱扫描多个管芯中的每一个的各个部分区域; 以及组合通过扫描所述部分区域获得的多个部分图像以提供管芯图像。
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公开(公告)号：US11181831B2
公开(公告)日：2021-11-23
申请号：US16558860
申请日：2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung-hwan Lee , Young-ho Kwon , Souk Kim , Young-hoon Sohn , Yu-sin Yang
IPC: G03F7/20
Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.
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