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    Semiconductor pattern detecting apparatus
    2.
    发明授权
    Semiconductor pattern detecting apparatus 有权

    公开(公告)号：US11017525B2

    公开(公告)日：2021-05-25

    申请号：US16541380

    申请日：2019-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hyung Ahn ,  Souk Kim ,  Joon Seo Song ,  Young Hoon Sohn ,  Yu Sin Yang

    IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

    Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.

    Method of inspecting semiconductor device
    3.
    发明授权
    Method of inspecting semiconductor device 有权

    公开(公告)号：US10559506B2

    公开(公告)日：2020-02-11

    申请号：US16113554

    申请日：2018-08-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Kook Kim ,  Jun Chul Kim ,  Myung Suk Um ,  Yu Sin Yang ,  Ye Ny Yim

    IPC: H01L21/66 ,  G01B15/00 ,  H01L21/263 ,  H01L21/687 ,  G06T7/00 ,  G06T3/60 ,  G06T7/60 ,  G06T7/73

    Abstract: A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.

    Optical measuring method for semiconductor wafer including a plurality of patterns and method of manufacturing semiconductor device using optical measurement
    6.
    发明授权
    Optical measuring method for semiconductor wafer including a plurality of patterns and method of manufacturing semiconductor device using optical measurement 有权

    公开(公告)号：US10410937B2

    公开(公告)日：2019-09-10

    申请号：US16035991

    申请日：2018-07-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jang Ik Park ,  Bong Seok Kim ,  Souk Kim ,  Yu Sin Yang ,  Soo Seok Lee

    IPC: H01L21/00 ,  H01L21/66 ,  H01L21/762 ,  H01L21/78

    Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.

    Apparatus and method for exchanging probe
    7.
    发明授权
    Apparatus and method for exchanging probe 有权

    公开(公告)号：US10222414B2

    公开(公告)日：2019-03-05

    申请号：US15286626

    申请日：2016-10-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae Wan Hong ,  Jeong Hoi Kim ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

    IPC: G01R31/28 ,  G01R1/04

    Abstract: An apparatus for exchanging a probe includes a stacker configured to receive a probe and to align the probe, a probe connector connected to the probe, and a laser alignment unit including a light emitter and a light receiver. The light emitter is configured to emit a laser beam to the probe, and the light receiver is configured to detect the laser beam reflected by the probe. The laser alignment unit is configured to detect when the probe is properly aligned on the probe connector using the light receiver, and the laser alignment unit is configured to stop moving the stacker when it is detected that the probe is properly aligned.

    PROCESS MANAGEMENT SYSTEMS USING COMPARISON OF STATISTICAL DATA TO PROCESS PARAMETERS AND PROCESS MANAGEMENT DEVICES
    8.
    发明申请
    PROCESS MANAGEMENT SYSTEMS USING COMPARISON OF STATISTICAL DATA TO PROCESS PARAMETERS AND PROCESS MANAGEMENT DEVICES 审中-公开
    使用统计数据比较处理参数和过程管理设备的过程管理系统

    公开(公告)号：US20150248127A1

    公开(公告)日：2015-09-03

    申请号：US14635193

    申请日：2015-03-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yu Sin Yang ,  Young Hoon Sohn ,  Bae Jin Lee ,  Sang Kil Lee ,  Chung Sam Jun

    IPC: G05B19/418

    CPC classification number: G05B19/418 ,  G05B19/41875 ,  G05B2219/45031 ,  H01L21/3086 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22

    Abstract: A process management system can include a processing device that can be configured to perform a semiconductor process on a plurality of wafers, the processing device controlled by a process parameter. A control device can be configured to acquire statistical data relating to the process parameter and can be configured to select a reference wafer from the plurality of wafers. The control device can be configured to compare a respective process parameter used for the reference wafer with the statistical data and can be configured to set a reference condition for the process parameter.

    Abstract translation: 过程管理系统可以包括处理设备，其可被配置为在多个晶片上执行半导体处理，该处理设备由过程参数控制。 控制装置可以被配置为获取与过程参数相关的统计数据，并且可以被配置为从多个晶片中选择参考晶片。 控制装置可以被配置为将用于参考晶片的相应过程参数与统计数据进行比较，并且可以被配置为设置用于过程参数的参考条件。

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